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Henan Honest High Heat Conductivity Aln Ceramic Substrate , Find Complete Details about Henan Honest High Heat Conductivity Aln Ceramic Substrate,Aln Substrate from Electrical Ceramics Supplier or Manufacturer-Zhengzhou Honesty Refractory Co., Ltd.
Henan Honest high heat conductivity AlN ceramic substrate
AlN substrate thermal conductivity is 260 w/(m.k), 5-8 times higher than the alumina ceramic and can bear 2200 ℃.
In addition, AlN substrate is not affected by aluminum liquid and other molten metal and gallium arsenide erosion, especially in the molten aluminum liquid has excellent resistance to erosion.
AlN substrate ceramic advantages:
1, AlN substrate ceramic substrate, high thermal conductivity, low expansion coefficient, high strength, high temperature resistance, corrosion resistance, high resistivity, dielectric loss is small, is ideal large scale integrated circuit cooling substrate and packaging material.
2, AlN substrate has high hardness and more than the traditional alumina, is a new type of wear resistant ceramic material,can be used for severe worn parts.
3, using AlN substrate heat melt erosion resistance and thermal shock resistance, can produce GaAs crystal crucible, Al evaporating dish, AlN substrate thin film can be made into high frequency piezoelectric element,such as very large scale integrated circuit substrate.
4, AlN substrate heat resistant, resistant to molten metal erosion, stable to acid, but easy eroded in alkaline solution. AIN newborn surface exposed to wet air will reaction generates a very thin oxide film.
Using this feature, can be used for aluminum, copper, silver, lead and other metal smelting crucible and burn casting mould material. AlN substrate metallization performance is good, can replace toxic oxide sensitive ceramic and can be widely used in the electronics industry.
Application:
1. RF/Microwave components
2. Power modulus
3. Power transformers
4. High power LED package
5. Laser diode sub-mounts
6. LED chip sub-mount
7. Microelectronic packages
8. Transistors
Substrate materials | thermal conductivity | dielectric constant | loss Angle | coefficient of thermal expansion (ppm/W•K) |
99.6%alumina ceramic | 27 | 9.9 +/- 0.15@ 1 MHz | 0.0001 | 6.5 - 7.5 |
(AlN) | >170 | 8.85 +/- 0.35@ 1 MHz | 0.001 | 4.6 |
quartz | 1.38 | 3.82@ 1 MHz | 0.000015@ 1 MHz 0.00033@ 24 GHz | 0.55 |
Other AlN substrates can be individually customized according to customer's requirements. | ||||
Property content | Property Index | |||
Thermal conductivity (W/m·k) | ≥170 | |||
Volume resistivity(Ω·cm) | >1013 | |||
Dielectric constant [1MHz, 25°C] | >9 | |||
Dielectric loss [1MHz,25°C] | 3.8*10-4 | |||
Dielectric strength(KV/mm) | 17 | |||
Density(g/cm3) | ≥3.30 | |||
Surface roughness Ra(µm) | 0.3~0.5 | |||
Thermal expansivity [20°C to 300°C](10-6/°C) | 4.6 | |||
Flexural strength (MPa) | 320~330 | |||
Modulus of elasticity (GPa) | 310~320 | |||
Moh’s hardness | 8 | |||
Water absorption(%) | 0 | |||
Camber(~/25(length)) | 0.03~0.05 | |||
Melting point(°C) | 2500 | |||
Appearance/color | Dark Gray | |||
